elektronische bauelemente SSM9973A 5 a, 60v n-channel enhancement mode power mosfet 29-jan-2010 rev. a page 1 of 3 rohs compliant product a suffix of -c specifies halogen & lead-free description the SSM9973A provide the designer with the best com bination of fast switching, ruggedized design, low on-resistance and cost effec tiveness. the sot-223 package is universally preferred for al l commercial-industrial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features simply drive requirement super high density cell design for extremely low r ds(on) maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain C source voltage v ds 60 v gate C source voltage v gs 20 v t a = 25c 5.0 a continuous drain current 3 , v gs @10v t a = 70c i d 4.0 a pulsed drain current 1,2 i dm 10 a total power dissipation, t a = 25c p d 2.7 w maximum junction C ambient 3 r ja 45 c/w linear derating factor 0.02 w/c operating junction & storage temperature range t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition drain-source breakdown voltage bv dss 60 - - v v gs =0v, i d =250 a gate threshold voltage v gs(th) 0.5 - 1.5 v v ds = v gs, i d =250 a forward transconductance g fs - 12 - s v ds =15v, i d =4a gate-source leakage current i gss - - 100 na v gs =20v t a = 25c - - 1 v ds =60v, v gs =0v drain- source leakage current t a = 70c i dss - - 10 a v ds =60v, v gs =0v - - 115 v gs =10v, i d =5a drain-source on resistance r ds(on) - - 125 m v gs =4.5v, i d =4.5a total gate charge 2 q g - 4.0 - gate-source charge q gs - 1.2 - gate-drain charge q gd - 1.0 - nc v gs =4.5v v ds =30v i d =4a turn-on delay time 2 t d(on) - 6 - rise time t r - 12 - turn-off delay time t d(off) - 18 - fall time t f - 10 - ns v dd =30v v gs =10v i d =2.5a r g =6 , r l =12 input capacitance c iss - 320 - output capacitance c oss - 42 - reverse transfer capacitance c rss - 20 - pf v ds =30v v gs =0v f=1mhz source-drain diode characteristics forward on voltage 2 v sd - - 1.2 v v gs =0v, i s =2.5a note: 1. pulse width limited by maximum junction temperat ure. 2. pulse width Q 300 s, duty cycle Q 2% 3. surface mounted on 1 in 2 copper pad of fr4 board; 120c/w when mounted on m in, copper pad. sot-223 millimeter millimeter ref. min. max. ref. min. max. a 6.20 6.70 g - 0.10 b 6.70 7.30 h - - c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k - - e 4.50 4.70 l 2.30 ref. f 0.60 0.82 m 2.90 3.10 top view 1 2 3 4 a m b d l k f g h j e c
elektronische bauelemente SSM9973A 5 a, 60v n-channel enhancement mode power mosfet 29-jan-2010 rev. a page 2 of 3 characteristic curves
elektronische bauelemente SSM9973A 5 a, 60v n-channel enhancement mode power mosfet 29-jan-2010 rev. a page 3 of 3 characteristic curves
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